Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)

摘要

An integrated circuit is disclosed which includes a variety of NDR devices having different characteristics. The different NDR devices are formed to have different PVRs, different onset NDR voltages, etc. in a common substrate, by controlling various conventional processing operations, such as an implant, an anneal, an insulator film deposition, and the like.