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Method for making both a negative differential resistance (NDR) device and a non-NDR device using a common MOS process
Method for making both a negative differential resistance (NDR) device and a non-NDR device using a common MOS process
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机译:使用普通的MOS工艺制造负差分电阻(NDR)器件和非NDR器件的方法
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摘要
A semiconductor manufacturing process is disclosed that is suitable for making both negative differential resistance (NDR) and non-NDR devices at the same time. An NDR process is thus integrated within a conventional CMOS process so that compatibility with existing fabrication procedures is maintained. In addition, many of the NDR process steps and non-NDR process steps are shared in common to form features of such devices at the same time.
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