N-TYPE TWO VALLEY SEMI-CONDUCTOR WITH BULK NEGATIVE DIFFERENTIAL RESISTANCE

• 1. 具有电流控制的负差分电阻的可扩展且低电压的无电铸纳米级二氧化钒阈值开关装置和弛张振荡器 [P] . 中国专利： CN111133598A . 2020-05-08
• 2. 基于负差分电阻(NDR)的存储器的强化读写方法 [P] . 中国专利： CN1679113A . 2005-10-05
• 3. N-TYPE-TWO VALLEY SEMI-CONDUCTOR WITH BULK NEGATIVE DIFFERENTIAL RESIST ANCE [P] . IL33600B . 1972-07-26

  机译： 具有本体负微分电阻的N型2谷形半导体

• 4. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) [P] . 美国专利： US7012833B2 . 2006-03-14

  机译： 具有负差分电阻（NDR）器件的集成电路，该器件具有变化的峰谷比（PVR）

• 5. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs) [P] . 美国专利： US2004110332A1 . 2004-06-10

  机译： 具有负差分电阻（NDR）器件的集成电路，该器件具有变化的峰谷比（PVR）

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• 2. Design and Fabrication of Novel Dual-Base Negative-Differential Resistance Heterojunction Bipolar Transistor [J] . 天津大学学报（英文版） . 2005,第005期
• 3. Resistance genes mediate differential resistance to pine defensive substances α-Pinene and H 2 O 2 in Bursaphelenchus xylophilus with different levels of virulence [J] . Lin Rui, Hongbin Liu, Rui Liang, 林业研究（英文版） . 2021,第004期
• 4. The initiation mechanism of N-type negative differential resistance areas on the IV-curves of IMPATT-diode in strong microwave field [C] . Usanov, D.A., Skripal, . 2003
• 5. Electrolyte negative differential resistance, nanoparticle dynamics in nanopores, and nanobubble generation at nanoelectrodes. [D] . Luo, Long. 2014
• 6. Negative Differential Resistance: Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure (Adv. Sci. 19/2020) [O] . Kil‐Su Jung, Keun Heo, Min‐Je Kim, 2020
• 7. Negative differential resistance in n-type noncompensated silicon at low temperature [O] . A. L. Danilyuk, A. G. Trafimenko, A. K. Fedotov, 2016
• 8. Impact Ionization, Bulk Negative Differential Conductivity and Other Nonequilibrium Carrier Phenomena in InSb [R] . Dick, C. L., Ancker-Johnson, B. 1970

• 1. Negative differential resistance behavior in doped C82 molecular devices [J] . 徐慧 ,贾姝婷 ,陈灵娜 . 中南大学学报 . 2012,第002期
• 2. Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis [J] . A. Guen-Bouazza ,C. Sayah ,B. Bouazza . 现代物理（英文） . 2013,第5期
• 3. 推广散装水泥是我省建设"两型社会"的重要举措 [C] . 陈祥权 . 2011年湖南科技论坛——建材专题分论坛 . 2011
• 4. P型非晶碳薄膜/钛酸锶表面电子气异质结光致负磁电阻的特性研究 [A] . 贺安鹏 . 2019