INTEGRATED CIRCUIT CONFIGURATIONS INCORPORATING SCHOTTKY BARRIER CONTACTS

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  机译： 集成肖特基势垒接触的绝缘衬底上的集成电路台面双极器件

• 4. MANUFACTURE OF SCHOTTKY BARRIER DIODE, AND SCHOTTKY BARRIER DIODE AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THE SAME [P] . 日本专利： JPH07263719A . 1995-10-13

  机译： 肖特基势垒二极管的制造以及肖特基势垒二极管和半导体集成电路具有相同的特征

• 5. METHODS OF PRODUCING SCHOTTKY BARRIER SILICIDE CONTACTS ON SILICON SUBTRATES AND SILICON SEMICONDUCTOR DEVICES PROVIDED WITH SCHOTTKY BARRIER SILICIDE CONTACTS [P] . 德国专利： DE3167721D1 . 1985-01-24

  机译： 在硅衬底上生产肖特基势垒硅化物接触的方法和带有肖特基势垒硅化物接触的硅半导体器件

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• 2. Human blood plasma-based electronic integrated circuit amplifier configuration [J] . Shiv Prasad Kosta, Manthan Manavadari, Killol Pandya, 生物医学研究杂志：英文版 . 2013,第006期
• 3. High open-circuit voltage Mos2 homojunction - effect of Schottky barriers at the contacts [C] . Carlos Bueno-Blanco, Simon A. Svatek, Der-Yuh Lin, IEEE Photovoltaic Specialists Conference . 2020
• 4. Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures. [D] . Sarpatwari, Karthik. 2009
• 5. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [O] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, -1
• 6. Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits [O] . Luca Nela, Georgios Kampitsis, Jun Ma, 2020

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