MANUFACTURE OF SCHOTTKY BARRIER DIODE, AND SCHOTTKY BARRIER DIODE AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THE SAME

摘要

PURPOSE: To enable a part of semiconductor substrate where an SBD having a shield layer is formed to be made urniform in distribution of impurity concen tration. ;CONSTITUTION: An impurity layer 10, which compensates a semiconductor substrate for its irregularity in distribtution of impurity concentration in a depth direction, is provided adjacent to a point of a shield layer 5 provided below a Schottky junction forming semiconductor region 6 which forms a Schottky barrier diode, wherein the point of the shield layer 5 denotes a point where the layer 5 becomes its peak in impurity concentration.;COPYRIGHT: (C)1995,JPO