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Etching glass/silica coatings - using carbon tetrafluoride plasma and photoresist mask
Etching glass/silica coatings - using carbon tetrafluoride plasma and photoresist mask
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机译:蚀刻玻璃/二氧化硅涂层-使用四氟化碳等离子体和光刻胶掩模
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摘要
Coatings, pref. of glass or silica, are etched in a CF4 plasma environment. A photoresist material is applied to the coating and masked, then the structure is placed in a chamber which can be evacuated. After evacuating to 10-1 torr and residual O2 insufficient to attack the photoresist coating, CF4 is introduced into the chamber to 8 x 10-1 torr and a plasma is prod. by h.f. energy. The technique can be used in the prodn. of I.C.s, only a simple mask being needed.
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机译:涂料,优选。在CF4等离子体环境中蚀刻玻璃或二氧化硅。将光致抗蚀剂材料施加到涂层上并进行掩膜,然后将结构放置在可以抽真空的腔室内。抽空至10-1托和残留的O2不足以侵蚀光致抗蚀剂涂层后,将CF4引入室中达到8 x 10-1托,并产生等离子体。通过h.f.能源。该技术可以在产品中使用。 I.C.s,只需要一个简单的面具。
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