ETCHING METHOD INCLUDING PLASMA PRE-TREATMENT FOR GENERATING CARBON CONTAINED FLUORINE-FREE-POLYMER ON PHOTORESIST PATTERN FOR IMPROVING ENDURANCE OF PHOTORESIST PATTERN BY PERFORMING PRE-TREATMENT USING CARBON MONOXIDE PLASMA

摘要

PURPOSE: An etching method including a plasma pre-treatment for generating a carbon contained fluorine-free-polymer on a photoresist pattern is provided to improve the endurance of the photoresist pattern by performing the pre-treatment using carbon monoxide plasma. CONSTITUTION: A photoresist pattern induction process is performed to provide a photoresist pattern(110). A plasma process for the photoresist pattern is performed by using plasma providing a carbon radical(120). An etching target layer is selectively etched by using the photoresist pattern as an etch mask(130). In the plasma process, the plasma is excited from carbon monoxide. In addition, the plasma is excited from carbon dioxide.