Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
Waveguide morphology; ICP etching; PZT thin films; etching methods; etching conditions;
机译:使用光刻胶掩模在CH_4 / H_2 / Ar电感耦合等离子体(ICP)蚀刻铟锡氧化物(ITO)期间具有无限高的蚀刻选择性
机译:以金薄膜的去湿纳米图案为掩模,通过电感耦合等离子体刻蚀,形成宽带和宽角度的硅抗反射亚波长结构
机译:氩等离子体感应耦合等离子体反应离子刻蚀研究在光滑侧壁薄膜铌酸锂波导中的应用
机译:具有光致抗蚀剂/铝双层遮蔽的光学波导的PZT薄膜的电感耦合等离子体(ICP)蚀刻
机译:激光烧蚀高分辨率电感耦合等离子体质谱(LA-HR-ICP-MS)和高分辨率电感耦合等离子体质谱(HR -ICP -MS)对生物基质的元素分析
机译:不同氟基混合气体使用电感耦合等离子体干法刻蚀钛酸钡薄膜的比较分析
机译:使用光致抗蚀剂掩模的GaAs的高压电感耦合等离子体蚀刻过程
机译:电感耦合等离子体(ICp)干蚀刻中三氯化硼/氯气体分子外延生长p型氮化铝镓的刻蚀特性及表面分析