A semiconductor device with schottky - transition, and production method thereof

• 1. 包括具有重叠掺杂区的肖特基二极管的半导体器件及其制造方法 [P] . 中国专利： CN103443907B . 2017.06.09
• 2. 具有肖特基源LDMOS的半导体器件及制造方法 [P] . 中国专利： CN103500757B . 2017.03.08
• 3. Schottky contact used in the production of electronic components comprises an insulating protective layer arranged on an insulating layer and in a protective region lying next to a metal-semiconductor transition [P] . 德国专利： DE10344749B3 . 2005-01-20

  机译： 用于电子元件生产的肖特基接触件包括绝缘保护层，该绝缘保护层布置在绝缘层上以及在紧邻金属-半导体过渡的保护区域中

• 4. A method of making a semiconductor device with schottky - transition [P] . 德国专利： DE69834096T2 . 2007-01-04

  机译： 一种具有肖特基跃迁的半导体器件的制造方法

• 5. A method for making a semiconductor device with schottky - transition [P] . 德国专利： DE69130041T2 . 1999-02-18

  机译： 一种具有肖特基跃迁的半导体器件的制造方法

• 1. Computerized FDTD Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication [J] . Phyo Sandar Win, Hsu Myat Tin Swe, Hla Myo Tun 计算机科学研究(英文) . 2021,第002期
• 2. FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE [J] . Yuan Yirang 数学物理学报（英文版） . 2005,第003期
• 3. IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE [J] . 陈蔚 数学物理学报（英文版） . 2003,第003期
• 4. Analysis of a two-grid method for semiconductor device problem [J] . Ying LIU, Yanping CHEN, Yunqing HUANG, 应用数学和力学（英文版） . 2021,第001期
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• 8. THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP [O] . B. A. Shangereeva 2013
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