Dielectrically isolated integral silicon diaphram or other semiconductor product

摘要

A dielectrically isolated, pressure responsive silicon diaphragm includes a single crystal substrate bonded to a single crystal strain gage component with an intermediate insulating layer and glass bonding layer. The boric oxide enriched glass has a lower softening temperature than the insulating layer and semiconductor and a matching expansion coefficient. Illustratory products are integral silicon diaphragms, integrated circuits, and power devices for high temperature applications where junction isolation is useless. In the method of fabrication the composite is bonded at elevated temperature under pressure and the temporary substrate is removed mechanically and by a final preferential etch. Active components with thinner semi-conductor layers of uniform thickness can be produced.