Stress reduction in AlGaAs-AlGaAsP multilayer structures

摘要

The average stress between contiguous layers of Al.sub.x Ga. sub.1.sub.- x As and Al.sub.y Ga.sub.1.sub.-y As (y x) is reduced by the addition of phosphorus during the growth of the latter layer to produce the quaternary Al.sub.y Ga.sub.1.sub.-y As.sub.1.sub.-z P.sub.z instead of the ternary Al.sub.y Ga.sub.1.sub.-y As. In order to reduce the average stress to less than about 2 × 10.sup.8 dynes/cm.sup.2 the amount of phosphorus added should satisfy the condition: ##EQU1## Also described is a double heterostructure junction laser comprising a GaAs or AlGaAs active layer sandwiched between layers of AlGaAsP.