A method for the production of an integrated mos - circuit structure with double layers of polycrystalline silicon on a silicon - substrate

• 1. 监测多晶硅衬底热退火活化效果及制造多晶硅衬底的方法 [P] . 中国专利： CN104362109B . 2016.12.21
• 2. 监测多晶硅衬底热退火活化效果及制造多晶硅衬底的方法 [P] . 中国专利： CN104362109A . 2015-02-18
• 3. A method for the production of an integrated mos - circuit structure with double layers of polycrystalline silicon on a silicon - substrate [P] . 德国专利： DE2645014C3 . 1980-02-28

  机译： 一种在硅衬底上生产带有多晶硅双层的集成mos-电路结构的方法。

• 4. A method for the production of an integrated mos - circuit structure with double layers of polycrystalline silicon on a silicon - substrate [P] . 德国专利： DE2645014B2 . 1979-06-07

  机译： 一种在硅衬底上生产带有多晶硅双层的集成mos-电路结构的方法。

• 5. A method for the production of structures of of metal silicide and polysilicon existing double layers on substrates comprising integrated semiconductor circuits by reactive ion etching [P] . 德国专利： DE3216823A1 . 1983-11-10

  机译： 一种通过反应离子刻蚀在包括集成半导体电路的衬底上生产金属硅化物和多晶硅现有双层结构的方法

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• 1. Rapid recovery of polycrystalline silicon from kerf loss slurry using double-layer organic solvent sedimentation method [J] . Peng-fei Xing ,Jing Guo ,Yan-xin Zhuang . 矿物冶金与材料学报 . 2013,第010期
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