A method for the production of structures of of metal silicide and polysilicon existing double layers on substrates comprising integrated semiconductor circuits by reactive ion etching

摘要

the feldeffektgesteuerte triac consists of several, and type a kammstruktur mutually assigned parallel laminar and oriented units (1, 2, 3).each unit comprises a band anodenzone (11, 21, 31) of the first teilthyristors and a band katodenseitige basiszone (12, 22, 32) of the second teilthyristors in the sourcezone (14, 24, 34) of a fet and a band katodenzone (13, 23, 33) is embedded. basiszone and anodenzone unit on a trace (18, 28, 38) connected with each other.the traces of the first, third, fifth, etc. unit and the second, fourth, sixth, etc. unit are respectively electrically connected with each other.