The field effect transistor has to support a large forbidden band

摘要

P the invention relates to a field effect transistor on the support to large forbidden band / p & & p & this transistor includes an active layer of n type, forming a heterojunction with the material under - mechanisms the latter having a forbidden band higher than that of the forbidden band of the active layer, the formation of electron currents between the source and drain, and forming in the substrate is avoided. The present invention applies to the microwave transistors. / p