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Field effect transistor on a support having a wide forbidden band
Field effect transistor on a support having a wide forbidden band
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机译:具有宽禁带的支撑上的场效应晶体管
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摘要
A field effect transistor deposited upon a substrate having a wide forbidden band comprises an active layer of n-type conductivity which forms a heterojunction with the substrate. Since the subjacent material has a forbidden band higher than the forbidden band of the active layer, the formation of electronic currents between the source and the drain and in the substrate is avoided.
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