ELECTRON BOMBARDED SEMICONDUCTOR DEVICES

摘要

1517911 1 Semiconductor devices; cathode ray tubes EMI Ltd 18 June 1975 [20 March 1974 8 May 1974] 12237/74 and 20260/74 Headings H1K and H1D A semiconductor device which, in operation is bombarded by an electron beam in a vacuum tube comprises a target having therein at least one rectifying junction which does not extend completely across the planar surface upon which the electrons impinge, there being electrodes on the planar surface so as to apply a voltage across the junction(s). The function of the device is to amplify a signal carried by the electron beam current. Fig. 3 shows respectively nSP+/SP and pSP+/SP regions 3, 4 diffused into an nsubstrate 2 and carrying respective bias electrodes 5a, 5b. The electron beam i p causes changes in the resistance of the reverse biased pn junction 2-4. The electrodes 5a, 5b are contacted by interdigitated finger conductors alternate ones of which are interconnected and contact alternate parallel diffused strips such as 3, 4. In Fig. 5 p and n diffused strips 10, 11 are formed in a pSP+/SP substrate 9, the end strip 11 and the substrate 9 carrying bias electrodes 12, 13 as shown. The electron beam i p ionizes the fully depleted junction regions of the reverse biased junctions and so increases the device conductivity in proportion to the electron beam current. The target may be soldered to a beryllia heat sink mounted in a water-cooled copper target holder.