Charge shift device with charge coupled elements - has variable thickness insulating film and oppositely doped regions in semiconductor substrate

摘要

The charge-coupled device has a substrate of semiconductor material, coated with an insulating film. The latter is of Variable thickness. The semiconductor substrate has regions of oppositely doped type. The charge shifting is determined by dimensioning of the insulating film and the substrate doping or the dielectric constants of the film and the substrate doping. The insulating film carries a single energising electrode, covering all charge-coupled elements of a channel. Preferably the insulating film has four regions of different thickness, arranged in specified geometric order. Underneath two film regions of greater thickness is an oppositely doped region of the substrate.