SEMICONDUCTOR DEVICES HAVING COMPLEMENTARY SEMICONDUCTOR ELEMENTS AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

摘要

P THIS INVENTION CONCERNS A SEMICONDUCTOR DEVICE HAVING COMPLEMENTARY SEMICONDUCTOR ELEMENTS. / P P ACCORDING TO THE INVENTION, IT INCLUDES MONOCRYSTALLINE SEMICONDUCTOR IOTS OF THE TYPE P 16 AND THE TYPE N 15 ; A POLYCRYSTALLINE SEMICONDUCTOR LAYER 12 SURROUNDING THEM TO DEFINE A MAJOR MAJOR PLAN WITH THE MAJOR PLANS OF THE ISLANDS, THE LAYER 12 SUPPORTING THE SEMICONDUCTOR ISLANDS IN AN ISOLATED STATE; AN INSULATING LAYER 18, 19 BETWEEN THE LATERAL AND LOWER SURFACES OF THE RESPECTIVE ISLANDS AND THE POLYCRYSTALLINE LAYER; HIGH PURITY IMPURITY LAYERS OF THE P TYPE AND THE N-TYPE 22, 21 IN PARTS OF THE RESPECTIVE ISLANDS NEAR THE INSULATING LAYERS, EACH ISLAND HAVING INCLINED SIDE SURFACES, THE ANGLES OF WHICH ARE DETERMINED BY THE CRYSTALLINE STRUCTURES; AND SEMICONDUCTOR ELEMENTS OF COMPLEMENTARY CHARACTERISTICS FORMED IN THE ISLANDS. The invention applies in particular to the formation of thyristors or transistors. / P