METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR, METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, COMPOUND SEMICONDUCTOR MANUFACTURING DEVICE, AND TOOL FOR MANUFACTURING COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To improve the durability of a tool used to hold a body to be formed during manufacture of a compound semiconductor using organic metal vapor phase epitaxy.;SOLUTION: In an MOCVD device which forms a layer of a group III nitride semiconductor on a formed surface of a compound semiconductor substrate by organic metal vapor phase epitaxy, a substrate holder 30 which holds the compound semiconductor substrate comprises a main portion 31 composed of SiC, and a coating portion 32 made of Si₃N₄ and provided covering at least a part of an outer peripheral surface of the main portion. The compound semiconductor substrate is fitted in a recessed portion 30 with the formed surface out, the substrate holder 30 is fitted rotatably in a reaction container of the MOCVD device, and a raw material gas of the group III nitride semiconductor is supplied into the reaction container to form a layer of the group III nitride semiconductor.;COPYRIGHT: (C)2011,JPO&INPIT