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Epitaxial growth of superconductors such as Nb.sub.3 Ge superconductors

机译:Nb.sub.3 Ge超导体等超导体的外延生长

摘要

Nb.sub.3 Ge, Nb.sub.3 Al and Nb.sub.3 Si are prepared in A15 structures at the exact stoichiometric ratio with epitaxial growth on selected substrates. The phase diagrams of the materials are altered by this technique and only the A15 phase is stable at the stoichiometric ratios thus permitting attainment of higher and sharper transition temperatures.
机译:Nb3 Ge,Nb3 Al和Nb3 Si在精确的化学计量比下以A15结构制备,并在选定的衬底上外延生长。通过这种技术可以改变材料的相图,只有A15相在化学计量比下是稳定的,因此可以实现更高和更尖锐的转变温度。

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