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DOPING METHOD OF STRONG REDUCTIVE IMPURITY TO GROUP IIIIV COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
DOPING METHOD OF STRONG REDUCTIVE IMPURITY TO GROUP IIIIV COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
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机译:IIIIV族化合物单晶的强还原杂质的掺杂方法
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摘要
PURPOSE:To obtain group III-IV single crystal of low dislocation density suitable for green or orange light emitting element by doping silicon being a stronger reductive impurity than boron by a liquid capsule method.
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