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DOPING METHOD OF IMPURITIES TO GROUP IIIIV COMPOUND SEMICONDUCTORS
DOPING METHOD OF IMPURITIES TO GROUP IIIIV COMPOUND SEMICONDUCTORS
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机译:IIIIV族化合物半导体杂质的掺杂方法
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摘要
PURPOSE:To perform impurity doping by providing an impurity-doped group III-V compound separately from a growth gas system in addition to a raw material for growth of group III-V compound semiconductor, etching the same and introducing it into the growth gas system.
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