MERGED PLATINUM SILICIDE FUSE AND SCHOTTKY DIODE AND METHOD OF MANUFACTURE THEREOF

摘要

The fused structure is formed by an insulating layer (11) having an opening on a silicon substrate (10). A shaped polysilicon layer (12) rests on the insulating layer and is in contact with the substrate through the opening; a platinum silicide layer (16) having the same shape as the polysilicon PtSi-layers in contact with the substrate forms a Schottky diode (40) and the area on the insulating layer form the fuse. This merged structure exhibits superior electrical characteristics of the Schottky diode and is more compact than the structure of the prior art.