New process for improving reverse characteristics of platinum silicide Schottky barrier power diodes

摘要

This paper reports the use of a unique reactive ion etching (RIE) in Schottky barrier power diode manufacture. Reverse electrical characteristics of conventional Schottky barrier diodes are compared with those of the devices fabricated by RIE. It is shown that such devices give better reverse electrical characteristics eliminating the inherent edge effects of metal- semiconductor contacts. It is also shown that the device yield has been raised to 60%, which is much better than that of conventional Schottky diodes.