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Method for registering a mask pattern in a photo-etching apparatus for semiconductor devices
Method for registering a mask pattern in a photo-etching apparatus for semiconductor devices
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机译:在用于半导体器件的光刻设备中对准掩模图案的方法
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摘要
A method is provided for registering a pattern on a mask plate with a pattern already formed on a semiconductor wafer. A reflector group is provided on the wafer comprising a plurality of reflectors having a predetermined shape, interval and alignment. Two window groups are provided at predetermined positions on the mask plate. Each window group comprises a plurality of windows having a predetermined shape, interval and alignment that corresponds to the shape, interval and alignment of the reflector group. One of the window groups is provided with a staggered phase relationship with the other window group such that when one of the wafer or the mask plate is moved relative to the other, variations in the quantity of light reflected by the reflector group and passed through the respective window groups is used to determine the relative position of the wafer and the mask plate.
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