One or more single crystals (4) having a composition xSiC.(1-x)A l N where x is 0.2 to 0.5, are formed epitaxially on a substrate (5) of Al2O3 by heating sources of SiC (7) and AlN (8), disposed close to the substrate, at a temperature between 1900 and 2020 DEG C in the presence of N2 and H2 directed to flow over the sources of SiC and AlN towards the substrate.
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机译：通过加热SiC（7）和AlN（1）的源，在Al 2 O 3的衬底（5）上外延形成一个或多个组成为xSiC。（1-x）AlN，其中x为0.2至0.5的单晶（4）。 8），在接近N 2和H 2的存在下，在1900至2020℃之间的温度下靠近衬底布置，该N 2和H 2定向流过SiC和AlN源流向衬底。
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