Photoresistant layer with variation in atomic composition and its method of manufacture, photoresistant cell provided with such a layer and with a wavelength filter and arrangement of such cells.

摘要

Photoresistant layer with variation of atomic composition and its method of manufacture, photoresistant cell provided with such a layer and with a wavelength filter and arrangement of such cells. The photoresistant layer 2 is made of a photoresistant compound whose chemical formula includes at least one atomic composition x. It exhibits, through its depth p, a monotonic variation in this atomic composition. The method consists in co-evaporating the component elements of the layer under vacuum while varying the temperature of at least one of the elements whose proportion, within the compound, depends on the atomic composition, in order to obtain the variation. The co-evaporation is followed by an in situ annealing in air. Application to optoelectronics. IMAGE