SELF-ALIGNED ANTIBLOOMING STRUCTURE FOR CHARGE- COUPLED DEVICES AND METHOD OF FABRICATION THEREOF

摘要

F-1479 (50.3999)(8332-18)SELF-ALIGNED ANTIBLOOMING STRUCTURESFOR CHARGE-COUPLED DEVICESAND METHOD OF FABRICATION THEREOFABSTRACT OF THE DISCLOSUREA self-aligned element antiblooming structure forapplication to charge-coupled devices includes a region inthe substrate in which the charge-coupled device is fabri-cated into which both a P and an N conductivity type impurityare introduced. By introducing impurities of differentdiffusivities, a sink region is created between two verynarrow antiblooming barriers. Using appropriate processcontrols, the potential height of the antiblooming barriersmay be adjusted to drain excess charge accumulating in thesubstrate adjacent the antiblooming barriers. In this mannerthe antiblooming function is accomplished using only a mini-mal area of the substrate. The invention is applicable tocharge-coupled devices utilizing a variety of differentclocking schemes, and to charge-coupled device image sensorsusing buried channels.