Development of Test Structures for Characterization of the Fabrication and Performance of Radiation-Hardened Charge-Coupled Device (CCD) Imagers: Annual Report, May 15, 1980 to May 14, 1981

摘要

The purpose of this project is to evaluate new test structures and test methods useful for the characterization of radiation-hardened CCD imagers. The results of measurements on CCD imager wafers using the surface-channel and buried-channel, integrated gated-diode electrometers, before and after exposure to Co60 radiation, and using the cross bridge/electrical alignment test structures are reported. Examples of cross sections of the CCDs made by beveling and staining are also presented.