Development of Test Structures for Characterization of the Fabrication and Performance of Radiation-Hardened Charge-Coupled Device (CCD) Imagers: Annual Report, December 1, 1978 to November 30, 1978

摘要

The project is to evaluate new test structures and test methods useful for the characterization of radiation-hardened CCD imagers. During the period covered by this report, consultation was provided to the Charles Stark Draper Laboratory, Inc. (CSDL) and to CSDL contractors on the implementation of test structures developed during the previous year of this project. In addition, the results of measurements on buried channel gated diodes and buried layer metal-oxide-semiconductor field-effect transistor (MOSFET) direct-current (dc) profilers are reported. Further advances in the development of the integrated gated-diode electrometer are also reported.