Design and fabrication of short gate-length heterostructure charge coupled devices for transversal filter applications

摘要

This paper presents the first reported quarter-micron double delta doped AlGaAs/ InGaAs charge coupled device for microwave filter applications. The design and fabrication of conventional and multi tapped delay line MMICs for RF filter applications are also discussed. Schrödinger and Poisson’s equations are self consistently solved with current continuity equations to show the variation in channel charge concentration as the gate voltagesare varied. The device is implemented as a recessed capacitive gate structure which is fabricated using established GaAs heterostructure MMIC technology to ensure good repeatability.