METHOD AND APPARATUS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES USING EPITAXIAL MOLECULAR BEAM TREATMENT

摘要

P THE INVENTION RELATES TO A PROCESS AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES. /P P THE PROCESS CONSISTS OF SUBJECTING A GAS SUBSTRATE ON WHICH AN OXIDIZED FILM IS SITUATED TO A DEGAZIFICATION TREATMENT CHAMBER 2, HEATING THE SUBSTRATE DURING IRRADIATION TREATMENT WITH A MOLECULAR BEAM WITHIN A PRE-TREATMENT CHAMBER 3 TO REMOVE THE OXIDIZED FILM FROM THE SUBSTRATE, AND GROWING A SEMICONDUCTOR LAYER WITH A PHOSPHORUS COMPOUND ON THE SUBSTRATE BY AN EPITAXIAL TREATMENT WITH A MOLECULAR BEAM WITHIN A GROWTH CHAMBER 4 CONNECTED TO THE PRE-TREATMENT CHAMBER, SAID MOLECULAR BEAM MAY BE AS OR IN. /P P APPLICATION TO THE MANUFACTURE OF LIGHT-EMITTING SEMICONDUCTORS. /P