INTEGRATED CIRCUITS EMPLOYING PROTON-BOMBARDED ALGAAS LAYERS

摘要

INTEGRATED CIRCUITS EMPLOYING PROTON-BOMBARDED A1GaAs LAYERS The property of materials in the GaAs/AlGaAs system, whereby at certain doses proton bombarded n-type material becomes highly resistive but p-type material remains highly conductive, is utilized to fabrication of integrated circuits which include buried semiconductor interconnections or bus bars between devices.