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OFFSET-GATE CHEMICAL-SENSITIVE FIELD-EFFECT TRANSISTORS (OG-CHEMFETS)

机译:偏置栅极化学敏感型场效应晶体管(OG-CHEMFET)

摘要

A selective chemosensitive microelectronic transducer is provided for the detection and measurement of chemical properties, by engineering a field-effect transistor such that source 6 and drain 7 regions are connected to bonding pads 2 and 4, and the semiconductor bulk connected to pad 1. The metal gate 8 is extended laterally to a remote area 9, and also to bonding pad 3 via a narrow metallization track 5 designed to support only a limited, predetermined electrical current in the manner of a fusible link. External electrical access to the device is achieved with wirebonding 14, and the device is selectively sealed with an inert, impervious encapsulation material 10 such that only gate area 9 remains exposed. Electroactive materials are deposited over the offset-gate area 9, or electrodeposited using connection through 8, 5 and 3. Subsequently, link 5 is open-circuited by pulsed electrical overload, creating a floating chemosensitive gate.
机译:通过设计场效应晶体管,提供了一种选择性的化学敏感的微电子换能器,用于检测和测量化学性质,以便将源6和漏7区域连接到焊盘2和4,并将半导体本体连接到焊盘1。金属栅极8横向地延伸到远端区域9,并且还通过狭窄的金属化轨道5延伸到接合垫3,该狭窄的金属化轨道5设计成以熔丝的方式仅支撑有限的预定电流。通过引线键合14可以实现对设备的外部电气访问,并且该设备用惰性,不渗透的封装材料10进行选择性密封,从而仅保留栅极区域9。电活性材料沉积在偏置栅极区域9上,或使用通过8、5和3的连接进行电沉积。随后,链接5通过脉冲电过载而开路,从而形成浮动的化学敏感栅极。

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