MANUFACTURE OF GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR

摘要

PURPOSE:To increase non-defective rate by a method wherein a direct current property of an element is measured at a stage where a measurement is practicable in an element manufacturing process, where screening is performed on the basis of a drain current low frequency noises. CONSTITUTION:A photoresist 32 is patterned on a semi-insulating GaAs substrate 31, Si ions are implanted for the formation of an n-type active layer 33, and thereafter heat treatment is performed for activation after the photoresist 32 is removed. Next, a Schottky gate electrode 34 is formed on the activated n-type layer 33 surface and ohmic electrodes 35 and 36 are formed on a source.drain region. And, a bias is applied onto an element for the measurement of a direct current property before a metal wiring process. Based on a drain voltage-drain current property, a element with a drain current having an oscillation amplitude larger than a prescribed value is screened out as a defective. By these processes, an element is improved in non-defective rate through the judgment of an element property including the evaluation of a crystal substrate.