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A process for making an ohmic contact to an N-type conductivity group III-V semiconductor compound and a semiconductor device having such an ohmic contact
A process for making an ohmic contact to an N-type conductivity group III-V semiconductor compound and a semiconductor device having such an ohmic contact
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机译:与N型导电性III-V族半导体化合物进行欧姆接触的方法以及具有该欧姆接触的半导体器件
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摘要
An ohmic contact is made to an n-type Group III-V semiconductor compound (eg gallium arsenide) by vapour depositing germanium (3) and a refractory metal (4) selected from the group consisting of molybdenum, tungsten and tantalum on to the substrate and sintering the substrate in a reducing atmosphere for a time and at a temperature sufficient to form the first-to-form germanide of the refractory metal. The resulting ohmic contact includes an interface region of germanium heavily doped with the Group V element disposed between a region of the Group III to V compound doped with germanium and the layer of germanide.
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