FORMATION METHOD OF THE N-TYPE OHMIC CONTACTS TO III-V COMPOUND SEMICONDUCTOR

摘要

The present invention relates to a method of forming an ohmic contact of a group 3-5 compound semiconductor using silicon as an n-type impurity, wherein a high concentration of silicon ions are implanted into a semiconductor surface to form a silicon ion implantation layer, A palladium thin film, a diffusion barrier film, and a metal wiring film are sequentially stacked on the silicon ion implantation layer, and then a substrate is heat-treated to palladium silicide the silicon ion implantation layer and the palladium thin film to form a compound between the group 3-5 compound semiconductor and the metal wiring film. To form an ohmic contact. The present invention relates to all Group 3-5 compounds using silicon as an n-type impurity, such as gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), indium gallium arsenide (InGaAs), indium phosphorus (InP), and indium gallium phosphorus (InGaP). It can be applied to form ohmic contact in the semiconductor.