Process for controlling and monitoring the incorporation of a doping material into conductive metallic layers during their manufacture

摘要

1. Process for monitoring and controlling the incorporation of doping gases in electrically conductive metallic films, as are used in particular in semi-conductor and thin-film technology, during the film manufacture by means of vapour deposition or sputtering, characterized in that a) the instantaneous electrical film resistance Ri and the instantaneous film thickness di are measured or determined constantly, b) the actual value of the controlled variable rho**Infin i is determined therefrom, c) the actual value is compared with the desired value rho**Infin i for the film thickness di , d) in the case of control deviations (desired-actual value differences), the metering of the inlet valve for the doping gas into the coating chamber is correspondingly varied as manipulated variable, and e) the coating operation is terminated when a given target value is reached.