首页> 外国专利> Sputtering target useful for coating substrates with a transparent conductive layer, comprises a gallium-doped zinc-containing material, which is metallic and has a further doping of a further material made of elements of a third main group

Sputtering target useful for coating substrates with a transparent conductive layer, comprises a gallium-doped zinc-containing material, which is metallic and has a further doping of a further material made of elements of a third main group

机译:可用于用透明导电层涂覆基板的溅射靶材包括金属掺杂的镓掺杂含锌材料,并进一步掺杂由第三主族元素制成的其他材料

摘要

Sputtering target comprises a gallium-doped zinc-containing material, which is metallic and has at least one further doping of a further material made of elements of third main group. An independent claim is also included for producing the sputtering target, comprising doping zinc with gallium and the further element of the third main group.
机译:溅射靶包括金属掺杂的含镓的含锌材料,该含锌的材料是金属的并且具有至少一种由第三主族元素制成的另一种材料的掺杂。还包括用于制造溅射靶的独立权利要求,该溅射靶包括用镓和第三主族的另一元素掺杂锌。

著录项

  • 公开/公告号DE102012203055A1

    专利类型

  • 公开/公告日2013-05-02

    原文格式PDF

  • 申请/专利权人 VON ARDENNE ANLAGENTECHNIK GMBH;

    申请/专利号DE201210203055

  • 发明设计人 LINS VOLKER DR.;HUETTL GRIT;

    申请日2012-02-28

  • 分类号C23C14/34;C23C14/14;H01L31/18;H01L21/28;

  • 国家 DE

  • 入库时间 2022-08-21 16:21:45

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