首页> 外国专利> Coating a substrate with a conductive and transparent metallic oxide layer by sputtering in a continuous process, comprises moving and coating the substrate in a coating chamber at a coating source with a tubular target of metallic oxide

Coating a substrate with a conductive and transparent metallic oxide layer by sputtering in a continuous process, comprises moving and coating the substrate in a coating chamber at a coating source with a tubular target of metallic oxide

机译:在连续过程中通过溅射用导电且透明的金属氧化物层涂覆衬底,包括在涂覆室中的涂覆室中用管状金属氧化物靶移动和涂覆衬底

摘要

The method for coating a substrate with a conductive and transparent metallic oxide layer by sputtering in a continuous process, comprises moving and coating the substrate in a coating chamber at a coating source with a tubular target of the metallic oxide. The substrate has a temperature range from room temperature to 90[deg] C during the coating process, and the applied layer is subsequently heat treated. The thermal treatment is made via the separation of a further layer by the conductive layer after breaking of the vacuum in a separate process. The method for coating a substrate with a conductive and transparent metallic oxide layer by sputtering in a continuous process, comprises moving and coating the substrate in a coating chamber at a coating source with a tubular target of the metallic oxide. The substrate has a temperature range from room temperature to 90[deg] C during the coating process, and the applied layer is subsequently heat treated. The thermal treatment is made via the separation of a further layer by the conductive layer after breaking of the vacuum in a separate process. The thermal treatment of the metal oxide layer takes place at = 350[deg] C. The substrate temperature is varied from ambient temperature to 90[deg] C by cleaning before the coating process.
机译:在连续过程中通过溅射用导电且透明的金属氧化物层涂覆衬底的方法包括在具有金属氧化物管状靶的涂覆源处在涂覆室中移动和涂覆衬底。在涂覆过程中,基底的温度范围为室温至90℃,随后对涂覆的层进行热处理。在分开的过程中破坏真空之后,通过导电层将另一层分开来进行热处理。在连续过程中通过溅射用导电且透明的金属氧化物层涂覆衬底的方法包括在具有金属氧化物管状靶的涂覆源处在涂覆室中移动和涂覆衬底。在涂覆过程中,基底的温度范围为室温至90℃,随后对涂覆的层进行热处理。在分开的过程中破坏真空之后,通过导电层将另一层分开来进行热处理。金属氧化物层的热处理在> = 350℃下进行。通过在涂覆工艺之前进行清洁,将基板温度从环境温度改变至90℃。

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