Method of producing a semiconductor device for the integrated injection logic, and semiconductor device so manufactured

摘要

An integrated injection logic (I.sup.2 L) semiconductor structure is disclosed which may be advantageously implemented in a group III-V compound semiconductor such as gallium arsenide. The base region of the lateral transistor is made extremely thin (less than one-tenth micron) by use of "regrowth" techniques. The structure of the vertical transistor is simplified by using a Schottky collector.