首页> 外文OA文献 >Quasi-particle injection devices for interfaces between superconductors and semiconductors.
【2h】

Quasi-particle injection devices for interfaces between superconductors and semiconductors.

机译:用于超导体和半导体之间接口的准粒子注入设备。

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

We have fabricated an injection type 3-terminal device for interface between superconductor and semiconductor circuits using a high temperature superconductor. When quasi-particles are injected from the Au electrode to a YBa2Cu3O7-x (YBCO) bridge, superconductivity of the bridge area is weakened and Ic of the bridge decreases. Therefore, we can easily make the bridge in resistive state by injecting sufficient amount of current Iinj . The length, width, and thickness of the bridge are 20 μm, 10 μm, and 100 nm, respectively. The Au-YBCO contact area is 200 μm 2. When the bridge became resistive, the resistance was about 100 Ω. The current gain |ΔIc/ΔIinj| was as high as 9. However, the contact resistance was about 17 Ω, which is 200 times as large as the required value for the operation as an interface device. This shortcoming might be overcome by appropriate annealing
机译:我们已经制造了一种使用高温超导体的超导体和半导体电路之间的接口的注入型3端子设备。当从Au电极向YBa2Cu3O7-x(YBCO)桥注入准粒子时,桥区的超导性减弱,桥的Ic减小。因此,我们可以通过注入足够量的电流Iinj轻松地使电桥处于电阻状态。桥的长度,宽度和厚度分别为20μm,10μm和100 nm。 Au-YBCO的接触面积为200μm2。当电桥变为电阻性时,电阻约为100Ω。电流增益|ΔIc/ΔIinj|接触电阻高达9。但是,接触电阻约为17Ω,是接口设备操作所需值的200倍。通过适当的退火可以克服这一缺点

著录项

  • 作者

    Shiga Hidehiro; Okabe Yoichi;

  • 作者单位
  • 年度 2001
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号