Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge

摘要

A process utilizing a microwave discharge technique for performing direct nitridation of silicon at a relatively low growth temperature of no more than about 500° C. in a nitrogen plasma ambient without the presence of hydrogen or a fluorine-containing species. Nitrogen is introduced through a quartz tube. A silicon rod connected to a voltage source is placed in the quartz tube and functions as an anodization electrode. The silicon wafer to be treated is connected to a second voltage source and functions as the second electrode of the anodizing circuit. A small DC voltage is applied to the silicon wafer to make the plasma current at the wafer and the silicon rod equal and minimize contamination of the film.