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Forming single crystal silicon on insulator by irradiating a laser beam having dual peak energy distribution onto polysilicon on a dielectric substrate having steps
Forming single crystal silicon on insulator by irradiating a laser beam having dual peak energy distribution onto polysilicon on a dielectric substrate having steps
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机译:通过将具有双峰能量分布的激光束照射到具有台阶的介电基板上的多晶硅上,在绝缘体上形成单晶硅
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摘要
A process for the production of semiconductor devices comprising: (1) forming a first oxide film on a semiconductor substrate, (2) forming a groove or grooves on the first oxide film, (3) forming a first polycrystalline silicon film as an active layer on the whole surface of the first oxide film, (4) forming a second oxide film on the first polycrystalline silicon film, (5) forming a second polycrystalline silicon film on the second oxide film, said second polycrystalline silicon film serving as a buffer layer which absorbs the fluctuation of a scanning laser beam irradiating the first polycrystalline silicon film in step (7), (6) forming an anti-reflection film made of an oxide film on said buffer layer, and (7) irradiating the first polycrystalline silicon film with a scanning laser beam having a dual peak type power distribution to melt said first polycrystalline silicon film in such a manner that both peaks in the power distribution of the laser beam are positioned at both outer sides of said grooves, respectively, thereby achieving a single crystallization of said first polycrystalline silicon film serving as an active layer within each of said grooves in which said semiconductor devices are to be formed.
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