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Charge pump circuit for driving N-channel MOS transistors

机译:用于驱动N沟道MOS晶体管的电荷泵电路

摘要

This charge pump circuit comprises a capacitor connected with a first terminal thereof to a reference voltage point through a first switch element and with a second terminal thereof to a switching section. The switching section, which is arranged between a positive supply voltage line and the ground, is controlled so as to alternately and selectively connect the second terminal of the capacitor to the positive supply and to ground. The first terminal of the capacitor is further connected to the gate of the MOS transistor to be driven. During operation the switch section is controlled so as to alternately charge the capacitor and allow transfer of the charge of the capacitor to the MOS transistor gate, thereby achieving a fast charging of the MOS transistor and a low circuit dissipation in the DC mode.
机译:该电荷泵电路包括电容器,该电容器的第一端子通过第一开关元件连接至参考电压点,并且其第二端子通过开关部件连接至参考电压点。控制布置在正电源电压线和地之间的开关部分,以便交替且选择性地将电容器的第二端子连接到正电源和地。电容器的第一端子还连接到要被驱动的MOS晶体管的栅极。在操作过程中,控制开关部分以便对电容器进行交替充电,并允许电容器的电荷转移到MOS晶体管栅极,从而在DC模式下实现MOS晶体管的快速充电和低电路耗散。

著录项

  • 公开/公告号US4736121A

    专利类型

  • 公开/公告日1988-04-05

    原文格式PDF

  • 申请/专利权人 SGS MICROELETTRONICA SPA;

    申请/专利号US19860897561

  • 发明设计人 CLAUDIO DIAZZI;DOMENICO ROSSI;CARLO CINI;

    申请日1986-08-18

  • 分类号H03K3/01;H03K3/353;H03K17/56;

  • 国家 US

  • 入库时间 2022-08-22 06:49:16

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