SEMICONDUCTOR SUPERLATTICE HETEROSTRUCTURES FABRICATION METHODS, STRUCTURES AND DEVICES

摘要

A novel quantum well semiconductor structure is described wherein the quantum well is formed by growing a thin («500 Å) epitaxial layer (36) on a patterned (e.g. grooved) nonplanar substrate (31, 34) so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodicity and QW depth. Using this structure one can achieve lateral carrier confinement and real refractive index waveguiding. Index guided GaAs/Al/GaAs lasers are described.