首页> 外国专利> ERROR-CORRECTING MEMORY WITH LOW STORAGE OVERHEAD AND FAST CORRECTION MECHANISM

ERROR-CORRECTING MEMORY WITH LOW STORAGE OVERHEAD AND FAST CORRECTION MECHANISM

机译:具有低存储开销和快速纠正机制的错误纠正内存

摘要

In the disclosed error-correcting memory, data bits are stored in a plurality of memory arrays. Each of said arrays have their memory cells arranged in rows and columns, and a word of said data bits is read by simultaneously selecting one cell at any one row-column pair in every array of said plurality. Every row of each array of said plurality includes a means for storing at least one code bit computed from the data bits in the corresponding row. A plurality of checking means respectively coupled to said plurality of arrays for receiving and checking all of the data bits and code bits in the row in its corresponding array from which said one cell is selected to form said word. And an additional memory array means contains memory cells arranged in rows and columns for storing a parity bit at each row-column pair computed from the word of data bits in said plurality of arrays at the corresponding row-column pair.
机译:在所公开的纠错存储器中,数据位被存储在多个存储器阵列中。每个所述阵列具有按行和列排列的存储单元,并且通过同时在所述多个阵列的每个阵列中的任一行-列对处同时选择一个单元来读取所述数据位的字。所述多个阵列的每个阵列的每一行包括用于存储从相应行中的数据位计算出的至少一个代码位的装置。多个检查装置分别耦合到所述多个阵列,用于接收和检查其相应阵列中的行中的所有数据位和代码位,从中选择所述一个单元以形成所述字。附加的存储阵列装置包括按行和列排列的存储单元,用于存储在每个行-​​列对上的奇偶校验位,该奇偶校验位是根据在相应的行-列对处的所述多个阵列中的数据位的字来计算的。

著录项

  • 公开/公告号DE3279483D1

    专利类型

  • 公开/公告日1989-04-06

    原文格式PDF

  • 申请/专利权人 UNISYS CORPORATION;

    申请/专利号DE19823279483T

  • 发明设计人 OSMAN FAZIL ISMET;

    申请日1982-10-11

  • 分类号G06F11/10;

  • 国家 DE

  • 入库时间 2022-08-22 06:31:50

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