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Monolithic two dimensional waveguide coupled cavity laser/modulator

机译:单片二维波导耦合腔激光器/调制器

摘要

A monolithic two dimensional waveguide coupled cavity laser/modulator structure for high speed modulation comprising a plurality of semiconductor layers on a semiconductor substrate. One of the semiconductor layers functions as an active region. Impurity induced disordering techniques are utilized to form first and second active mediums in the structure having co-axial two dimensional optical cavities. One of these active mediums functions as a laser and the other as a modulator. A passive two dimensional waveguide is integrally formed between the two active mediums having a highest refractive index at its core with diminishing refractive index omnidirectionally from its core with waveguide core having a energy bandgap level higher than both of the active mediums exhibiting low optical absorption at the gain wavelength of either of the active mediums. The modulator can be operated between an electro-absorption mode and a gain modulation mode while the laser is current pumped above threshold with the modulated optical switching of the output of said laser being less than 100 picoseconds as a function of applied voltage to said modulator varied in a range of 0 to 2 volts as illustrated by the curves in FIG. 14.
机译:用于高速调制的整体式二维波导耦合腔激光器/调制器结构,包括在半导体衬底上的多个半导体层。半导体层之一用作有源区。杂质诱导的无序技术用于在具有同轴二维光学腔的结构中形成第一和第二活性介质。这些活性介质中的一种充当激光,另一种充当调制器。无源二维波导整体地形成在其核心处具有最高折射率的两个有源介质之间,并且从其中心全向减小折射率,而其波导带的能带隙水平高于两个有源介质,在这两个有源介质中均显示出低的光吸收率。两种有源介质的增益波长。调制器可以在电吸收模式和增益调制模式之间工作,同时激光器被电流泵浦到阈值以上,并且随着向所述调制器施加的电压的变化,所述激光器的输出的调制光开关小于100皮秒。如图2中的曲线所示,在0伏到2伏的范围内的电压为0。 14。

著录项

  • 公开/公告号US4802182A

    专利类型

  • 公开/公告日1989-01-31

    原文格式PDF

  • 申请/专利权人 XEROX CORPORATION;

    申请/专利号US19870117706

  • 发明设计人 THOMAS L. PAOLI;ROBERT L. THORNTON;

    申请日1987-11-05

  • 分类号H01S3/19;H01S3/10;

  • 国家 US

  • 入库时间 2022-08-22 06:28:39

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