Method of fabricating a Si/SiC amorphous heterojunction photo transistor

摘要

A heterojunction amorphous SiC/S.sub.i phototransistor with the structure of Al/n.sup.+ a-SiC/i a-SiC/p.sup.+ a-SiC/i a-Si/n.sup.+ a- SiC is provided. This new device has a very thin a-SiC base (100) and a- SiC emitter, which provides an effective barrier to accumulate more photo generated holes at the base and therefore improves the gain significantly. An optical gain of 40 was obtained at an incident power of 5 w. This device has very promising applications as a flat panel display transistor, a phototransistor in photosensing element/array, and photo coupler to replace the p-i-n photodiode.