METHOD OF PREPARING NPN/PNP PHOTOELECTRIC TRANSISTOR HAVING GA2O3/SIC HETEROJUNCTION

摘要

A method of preparing an NPN/PNP photoelectric transistor having a Ga2O3/SiC heterojunction. The preparation method comprises: selecting a SiC substrate (1); growing a homogeneous epitaxial layer (2) on a surface of the SiC substrate to form a collector region, and growing a heterogeneous epitaxial layer (3) on a surface of the homogeneous epitaxial layer and performing etching to form a base region, and growing a β-Ga2O3 material (4) on a surface of the heterogeneous epitaxial layer, and performing etching to form an emitter region; growing a first metal material on a surface of the collector region to form a collector electrode (6); and growing a second metal material on a surface of the emitter region to form an emitter electrode (5).